Resistance Variable Memory Structure and Method of Forming the Same

ABSTRACT

A memory structure includes a first dielectric layer, having a first top surface, over a conductive structure. A first opening in the first dielectric layer exposes an area of the conductive structure, and has an interior sidewall. A first electrode structure, having a first portion and a second portion, is over the exposed area of the conductive structure. The second portion extends upwardly along the interior sidewall. A resistance variable layer is disposed over the first electrode. A second electrode structure, having a third portion and a fourth portion, is over the resistance variable layer. The third portion has a second top surface below the first top surface of the first dielectric layer. The fourth portion extends upwardly along the resistance variable layer. A second opening is defined by the second electrode structure. At least a part of a second dielectric layer is disposed in the second opening.

TECHNICAL FIELD

This disclosure relates generally to a semiconductor structure and, moreparticularly, to a resistance variable memory structure and method offorming a resistance variable memory structure.

BACKGROUND

In integrated circuit (IC) devices, resistive random access memory(RRAM) is an emerging technology for next generation non-volatile memorydevices. Generally, RRAM typically use a dielectric material, whichalthough normally insulating can be made to conduct through a filamentor conduction path formed after application of a specific voltage. Oncethe filament is formed, it may be set (i.e., re-formed, resulting in alower resistance across the RRAM) or reset (i.e., broken, resulting in ahigh resistance across the RRAM) by appropriately applied voltages. Thelow and high resistance states can be utilized to indicate a digitalsignal of “1” or “0” depending upon the resistance state, and therebyprovide a non-volatile memory cell that can store a bit.

From an application point of view, RRAM has many advantages. RRAM has asimple cell structure and CMOS logic compatible processes which resultin a reduction of the manufacturing complexity and cost in comparisonwith other non-volatile memory structures. Despite the attractiveproperties noted above, a number of challenges exist in connection withdeveloping RRAM. Various techniques directed at configurations andmaterials of these RRAMs have been implemented to try and furtherimprove device performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure may be understood from the followingdetailed description and the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flowchart of a method of forming a resistance variablememory structure according to at least one embodiment of thisdisclosure.

FIGS. 2A to 2F are cross-sectional views of a resistance variable memorystructure at various stages of manufacture according to one or moreembodiments of the method of FIG. 1.

DETAILED DESCRIPTION

The making and using of illustrative embodiments are discussed in detailbelow. It should be appreciated, however, that the disclosure providesmany applicable inventive concepts that can be embodied in a widevariety of specific contexts. The specific embodiments discussed aremerely illustrative and do not limit the scope of the disclosure.

According to one or more embodiments of this disclosure, at least oneresistance variable memory structure is formed within a semiconductorchip region of a substrate. A plurality of semiconductor chip regions ismarked on the substrate by scribe lines between the chip regions. Thesubstrate will go through a variety of cleaning, layering, patterning,etching and doping steps to form the semiconductor structures. The term“substrate” herein generally refers to a bulk semiconductor substrate onwhich various layers and device structures are formed. In someembodiments, the bulk substrate includes silicon or a compoundsemiconductor, such as GaAs, InP, Si/Ge, or SiC. Examples of the layersinclude dielectric layers, doped layers, polysilicon layers orconductive layers. Examples of the device structures includetransistors, resistors, and/or capacitors, which may be interconnectedthrough an interconnect layer to additional integrated circuits.

FIG. 1 is a flowchart of a method 100 of forming a resistance variablememory structure according to at least one embodiment of thisdisclosure. FIGS. 2A to 2F are cross-sectional views of a resistancevariable memory structure 200 at various stages of manufacture accordingto various embodiments of the method 100 of FIG. 1. Additional processesmay be provided before, during, or after the method 100 of FIG. 1.Various figures have been simplified for a better understanding of theinventive concepts of the present disclosure.

Referring now to FIG. 1, the flowchart of the method 100 begins withoperation 101. A first dielectric layer is formed over a conductivestructure. The first dielectric layer has a first top surface. The firstdielectric layer includes a substantially oxygen-free dielectricmaterial such as silicon carbide or silicon nitride. In someembodiments, the conductive structure is embedded in an insulating layerformed over a substrate. The insulating layer may include multipleinsulating layers.

Referring to FIG. 2A, which is an enlarged cross-sectional view of aportion of a resistance variable memory structure 200 after performingoperation 101. The resistance variable memory structure 200 includes aconductive structure 201 formed over a substrate (not shown) such as asilicon carbide (SiC) substrate, GaAs, InP, Si/Ge or a siliconsubstrate. In some embodiments, the substrate includes an insulatinglayer (not shown) formed over a top surface of the substrate. Theinsulating layer comprises silicon oxide, fluorinated silica glass(FSG), carbon doped silicon oxide, tetra-ethyl-ortho-silicate (TEOS)oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG),Black Diamond® (Applied Materials of Santa Clara, Calif.), amorphousfluorinated carbon, low-k dielectric material, or combinations thereof.

The conductive structure 201 is formed embedded in the insulating layer.In certain embodiments, the conductive structure 201 includes aconductive interconnect, a doped region or a silicide region. In someembodiments, the conductive structure 201 includes Al, Cu, Ti, Ta, W,Mo, TaN, NiSi, CoSi, TiN, WN, silicon or combinations thereof. In theillustrated example of FIG. 2A, the conductive structure 201 may beformed by lithography patterning and etching in the insulating layer. Ametal layer deposition and planarization processes are performed overthe insulating layer to form the conductive structure 201. A top surfaceof the conductive structure 201 is substantially coplanar with a topsurface the insulating layer.

Still referring to FIG. 2A, a first dielectric layer 203 is formed overthe conductive structure 201. The first dielectric layer 203 has a firsttop surface 203A. The first dielectric layer 203 may prevent theconductive structure 201 from being oxidized. In certain embodiments,the first dielectric layer 203 includes a substantially oxygen-freedielectric material such as silicon carbide or silicon nitride. Thefirst dielectric layer 203 may also protect conductive paths between thefollowing formed first electrode structure and second electrodestructure, and may enhance the electrical characteristic stability forthe resistance variable memory structure 200. A further explanation willbe provided below. The formation process may include chemical vapordeposition (CVD), atomic layer deposition (ALD) or plasma enhanced CVD(PECVD).

Referring back to FIG. 1, method 100 continues with operation 102. Inoperation 102, an opening is etched in the first dielectric layer thatexposes an area of the conductive structure. The opening has an interiorsidewall surface.

Referring to FIG. 2B, which is a cross-sectional view of the resistancevariable memory structure 200 after performing operation 102. In atleast one embodiment, a photo resist coating and a lithographypatterning are performed over the first dielectric layer 203. Apatterned mask layer 205 (e.g. photo resist layer) is formed on thefirst top surface 203A and a hole in the patterned mask layer 205exposes a part of the first dielectric layer 203. An etching process 207is performed to remove the part of the first dielectric layer 203. Afirst opening 209 is formed in first dielectric layer 203 and exposes anarea 201A of the conductive structure 201. The opening 209 has aninterior sidewall surface 209B. The first opening 209 has an interiorangle θ between a plane parallel to a top surface of the area 201A andthe interior sidewall surface 209B. In certain examples, the interiorangle θ is in a range from about 92° to about 135°. In some embodiments,process parameters such as gas ratio and bias power are adjusted tocontrol the sidewall interior angle θ. The interior angle θ within theabove range improves the step coverage of the following first electrodematerial 211 deposition, prevents the first electrode material 211tending to overhang at the top corner of the first opening 201 and mayenhance the electrical characteristic stability for the resistancevariable memory structure 200.

The first opening 209 has a height D from the top surface of the area201A to first top surface 203A of the first dielectric layer 203, and awidth W parallel to the top surface of the area 201A. In some examples,an aspect ratio D/W of the first opening 209 is in a range from about0.3 to about 1. A further description will be provided below in the textrelated to FIG. 2D ₁.

The patterned mask layer 205 is removed after forming the first opening209.

Referring back to FIG. 1, method 100 continues with operations 103 to106. In operation 103, a first electrode material is formed over theexposed area of the conductive structure, along the interior sidewallsurface of the opening and over the first top surface of the firstdielectric layer. The opening is partially filled with the firstelectrode material. A portion of the first electrode material over theexposed area has a top surface below the first top surface of the firstdielectric layer. In operation 104, a resistance variable layer isformed over the first electrode material. In operation 105, a secondelectrode material is formed over the resistance variable layer. Thesecond electrode material has a portion in the opening. The portion hasa second top surface below the first top surface of the first dielectriclayer. In operation 106, a second dielectric layer is formed over thesecond electrode material. In some embodiments, the operations 103 to106 are performed in a same mainframe (i.e. piece of processingequipment) with different process chambers without exposure to anexternal environment, such as air, from the operation 103 to operation106.

Referring to FIG. 2C, which is a cross-sectional view of the resistancevariable memory structure 200 after performing operations 103 to 106. Afirst electrode material 211 is formed over the exposed area 201A of theconductive structure 201, along the interior sidewall surface 209B ofthe first opening 209 and over the first top surface 203A of the firstdielectric layer 203. The first electrode material 211 includes aconductive material having an appropriate work function such that a highwork function wall is built between the first electrode material 211 anda subsequently formed resistance variable layer 213. The first electrodematerial 211 may comprise Pt, AlCu, TiN, Au, Ti, Ta, TaN, W, WN, Cu orcombinations thereof. In certain embodiments, the first electrodematerial 211 has a thickness T₁ in a range from about 150 Å to 350 Å.

In certain examples, the first electrode material 211 is deposited byatomic layer deposition (ALD). The first electrode material 211 may be aconformal layer and a thickness variation ratio of the thickest portionto thinnest portion in a range from 1 to 3 has been found to havebeneficial effects of conformity. In some embodiments, formation methodsfor the first electrode material 211 include sputtering or PVD.

A resistance variable layer 213 is formed over the first electrodematerial 211. The resistance variable layer 213 has a resistivitycapable of switching between a high resistance state and a lowresistance state (or conductive), by application of an electricalvoltage. In various embodiments, the resistance variable layer 213includes at least one of dielectric materials comprising a high-kdielectric material, a binary metal oxide and a transition metal oxide.In some embodiments, the resistance variable layer 213 includes nickeloxide, titanium oxide, hafnium oxide, zirconium oxide, zinc oxide,tungsten oxide, aluminum oxide, tantalum oxide, molybdenum oxide orcopper oxide. The resistance variable layer 213 has a thickness T₂ in arange from about 20 Å to 150 Å. In some embodiments, the resistancevariable layer 213 is conformally deposited over the first electrodematerial 211 by ALD. A thickness variation ratio of the thickest portionto thinnest portion in a range from 1 to 3 has been found to havebeneficial effects of conformity. In some embodiments, formation methodsfor the resistance variable layer 213 include pulse laser deposition(PLD).

Still referring to FIG. 2C, a metal cap layer 215 optionally is formedon the resistance variable layer 213. The metal cap layer 215 includes afirst metal material that is capable of depriving oxygen from theresistance variable layer 213, or that creates vacancy defects in theresistance variable layer 213. The metal cap layer 215 comprises atleast one of titanium, platinum or palladium.

A second electrode material 217 is deposited over the resistancevariable layer 213 (and on the metal cap layer 215 if the metal caplayer 215 exists). The second electrode material 217 may includesuitable conductive materials to electrically connect a subsequentlyformed interconnect structure for electrical routing for the resistancevariable memory structure 200. The second electrode material 217 maycomprise Pt, AlCu, TiN, Au, Ti, Ta, TaN, W, WN, Cu or combinationsthereof. In certain embodiments, the second electrode material 217 has athickness T₃ in a range from about 150 Å to 350 Å. The first opening 209becomes a shallower second opening (not shown) after second electrodematerial 217 is formed. A portion of the second electrode material 217in the first opening 209 has a second top surface 217A below the firsttop surface 203A of the first dielectric layer 203. The second electrodematerial 217 may be a conformal layer and a thickness variation ratio ofthe thickest portion to thinnest portion in a range from 1 to 3 has beenfound to have beneficial effects of conformity. The formation methodsfor the second electrode material 217 include ALD, sputtering, or PVD.

Still referring to FIG. 2C, a second dielectric layer 219 is formed overthe second electrode material 217 filing the second opening. In certainembodiments, the second dielectric layer 219 includes a substantiallyoxygen-free dielectric material such as silicon carbide or siliconnitride. The second dielectric layer 219 may protect conductive pathsbetween the following formed first electrode structure and secondelectrode structure, and may enhance the electrical characteristicstability for the resistance variable memory structure 200. Theformation process may include chemical vapor deposition (CVD), atomiclayer deposition (ALD) or plasma enhanced CVD (PECVD).

In some embodiments, the resistance variable memory structure 200further includes a sacrificial layer 231 formed over the seconddielectric layer 219 to a level above the first top surface 203A of thefirst dielectric layer 203. The sacrificial layer 231 includes an oxidelayer or other suitable materials which have less etching or polishingresistance compared to the second dielectric layer 219. Advantageously,the sacrificial layer 231 fills the second opening surrounded by seconddielectric layer 219 and reduces topographic differences among theresistance variable memory structure 200 shown in FIG. 2C and providesfor a smooth new surface. The sacrificial layer 231 enhances thecapability of generating a smooth planarized second dielectric layer 219by the following polishing process.

Referring back to FIG. 1, method 100 continues with operation 107. Inoperation 107, at least one polishing process is performed to remove thesecond dielectric layer, the second electrode material, the resistancevariable layer and the first electrode material above the first topsurface of the first dielectric layer.

FIG. 2D ₁ is a cross-sectional view of the resistance variable memorystructure 200 for certain embodiments after performing operation 107. Atleast one chemical mechanical polishing (CMP) process is performed toremove the sacrificial layer 231, a portion of the second dielectriclayer 219, a portion of the second electrode material 217, a portion ofthe resistance variable layer 213 and a portion of the first electrodematerial 211. The first top surface 203A of the first dielectric layer203 is exposed. A resistive random access memory (RRAM) cell is formedover the exposed area 201A of the conductive structure 201 and along theinterior sidewall surface 209B of the first opening 209. The planarizedsecond dielectric layer 219 is disposed in a top section of the firstopening 209.

The RRAM cell includes a first electrode structure 211E, a resistancevariable layer 213P and a second electrode structure 217E. A metal caplayer 215P is optionally formed between the resistance variable layer213P and the second electrode structure 217E. The first electrodestructure 211E has a first portion 211E₁ and an integrally connectedsecond portion 211E₂. The first portion 211E₁ is over the exposed area201A of the conductive structure 201. The second portion 211E₂ extendsupwardly along the interior sidewall surface 209B of the first opening209. The resistance variable layer 213P is disposed over the firstelectrode structure 211E. The second electrode structure 217E has athird portion 217E₃ and an integrally connected fourth portion 217E₄.The third portion 217E₃ has the second top surface 217A below the firsttop surface 203A of the first dielectric layer 203. The fourth portion217E₄ extends upwardly along the resistance variable layer 213P. Thesecond opening (not shown) is defined by the third portion 217E₃ and thefourth portion 217E₄ of the second electrode structure 217E. Theplanarized second dielectric layer 219 is disposed in the second opening(also the top section of the first opening 209). An edge region ofresistance variable layer 213P, an edge region of the second portion211E₂ of the first electrode structure 211E and an edge region of thefourth portion 217E₄ of the second electrode structure 217E aresubstantially coplanar to the first top surface 203A of the firstdielectric layer 203. An edge region of the RRAM cell does not protrudeout of the top surface 203A of the first dielectric layer 203.

This paragraph continues to the previous discussion about the aspectratio D/W of the first opening 209 in FIG. 2B. If the aspect ratio D/Wis less than 0.3, the first opening 209 may be too shallow for thesecond dielectric layer 219. The second dielectric layer 219 may becompletely removed by the least one CMP process. There may be noplanarized second dielectric layer 219 left in the top section of thefirst opening 209. There may be no protection for the third portion217E₃ and the fourth portion 217E₄ of the second electrode structure217E. If the aspect ratio D/W is larger than 1, a combined layer whichincludes the first electrode material 211, the resistance variable layer213, the second electrode material 217, the second dielectric layer 219and the sacrificial layer 231 tends to overhang at the top corner of thefirst opening 201. The electrical characteristic stability for theresistance variable memory structure 200 may degrade.

Referring to FIG. 2D ₂, which is a cross-sectional view of theresistance variable memory structure 200 for some embodiments afterperforming operation 107. Similar to the RRAM cell shown in FIG. 2D ₁,the RRAM cell shown in FIG. 2D ₂ includes the first electrode structure211E, the resistance variable layer 213P and the second electrodestructure 217E. However, a further etching process is performed to pullback top surfaces of the second portion 211E₂ and the fourth portion217E₄. An edge region of resistance variable layer 213P protrudes with aheight H out of an edge region of the first electrode structure 211E andan edge region of the second electrode structure 217E. In certainembodiments, the height H is more than twice of the thickness T₂ of theresistance variable layer 213P. With protrusions of resistance variablelayer 213P, the first electrode structure 211E and the second electrodestructure 217E are isolated from each other. There is no residualconductive material of the first electrode structure 211E or the secondelectrode structure 217E on surfaces of the RRAM cell. Hence, possibleleakage paths are eliminated and the resistance variable memorystructure 200 may have better electrical characteristic stability.

Referring to FIG. 2E, which is a cross-sectional view of the resistancevariable memory structure 200 after forming an insulating layer 233 overFIG. 2D ₁. The following discussion could equally apply to theembodiment illustrated in FIG. 2D ₂. The insulating layer 233 mayprotect the first electrode structure 211E and the second electrodestructure 217E been disturbed by environments during various operationsfor data storage. In certain embodiments, the insulating layer 233includes a substantially oxygen-free dielectric material such as siliconcarbide or silicon nitride. In some embodiments, the insulating layer233 and the second dielectric layer 219 are a same dielectric material.

Referring back to FIG. 1, method 100 optionally continues with operation108. In operation 108, a conductive plug is formed and contacts thesecond electrode material.

FIG. 2F is a cross-sectional view of the resistance variable memorystructure 200 after performing operation 108. An inter-metal dielectric(IMD) layer 235 may be blanket formed over insulating layer 233 shown inFIG. 2E. The IMD layer 235 may include multiple dielectric layers. TheIMD layer 223 may comprise silicon oxide, fluorinated silica glass(FSG), carbon doped silicon oxide, tetra-ethyl-ortho-silicate (TEOS)oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG),Black Diamond® (Applied Materials of Santa Clara, Calif.), amorphousfluorinated carbon, low-k dielectric material, or combinations thereof.

In certain embodiments, a dual damascene process is performed in the IMDlayer 235 to form a conductive wire 237A and an integrally connectedconductive plug 237B. The conductive plug 237B contacts the thirdportion 217E₃ of the second electrode structure 217E. A conductivematerial of the conductive wire 237A and the conductive plug 237Bincludes copper, copper alloys, aluminum or tungsten.

FIG. 2F also illustrates the resistance variable memory structure 200 invarious operations for data storage. In a “forming” operation, a“forming” voltage is applied to the first and second electrodes 211E and217E, respectively. The “forming” voltage is high enough to generate aconductive portion in the resistance variable layer 213P between thefirst electrode 211E and the second electrode 217E. In one example, theconductive portion includes one or more conductive filaments 250 toprovide a conductive path such that the conductive portion of theresistance variable layer 213P shows an “on” or low resistance state.The conductive path may be related to the lineup of the defect (e.g.oxygen) vacancies in the conductive portion of the resistance variablelayer between the first portion 211E₁ and the third portion 217E₃. Insome embodiments, the “forming” voltage is applied only one time. Oncethe conductive path is formed, the conductive path will remain presentin the conductive portion of the resistance variable layer 213P. Otheroperations (reset operation and set operation) may disconnect orreconnect the conductive path using smaller voltages or differentvoltages.

Advantageously, the first dielectric layer 203, the second dielectriclayer 219 and the insulating layer 233 include one or more substantiallyoxygen-free dielectric materials. The layers 203, 219 and 233 surroundthe RRAM cell. The layers 203, 219 and 233 may prevent the lineup of thedefect (e.g. oxygen) vacancies for conductive paths 250 in theresistance variable layer 213P from being disturbed by oxygen atoms fromadjacent layers. In this disclosure, the RRAM cell is defined inoperation 107 with a CMP process. This disclosure eliminates possibleplasma damage to the RRAM cell formed by plasma dry etching processes.The electrical characteristic stability and reliability for theresistance variable memory structure 200 are enhanced by variousembodiments of this disclosure.

One aspect of the disclosure describes a memory structure. The memorystructure includes a first dielectric layer over a conductive structure.The first dielectric layer has a first top surface. A first opening isin the first dielectric layer and exposes an area of the conductivestructure. The first opening has an interior sidewall surface. A firstelectrode has a first portion and an integrally connected secondportion. The first portion is over the exposed area of the conductivestructure. The second portion extends upwardly along the interiorsidewall surface of the first opening. A resistance variable layer isdisposed over the first portion and the second portion of the firstelectrode. A second electrode is over the resistance variable layer. Thesecond electrode had a third portion and an integrally connected fourthportion. The third portion has a second top surface below the first topsurface of the first dielectric layer. The fourth portion extendsupwardly along the resistance variable layer. A second opening isdefined by the third portion and the fourth portion of the secondelectrode. At least a part of a second dielectric layer is disposed inthe second opening.

A further aspect of the disclosure describes a memory structure. Thememory structure includes a first dielectric layer having a top surfaceand an opening with an interior sidewall surface. At least a part of asecond dielectric layer is disposed in a top section of the opening. Aresistive random access memory (RRAM) cell is disposed between theinterior sidewall surface of the opening and the second dielectriclayer. The RRAM cell includes a first electrode, a resistance variablelayer and a second electrode. The first electrode is disposed in abottom section of the opening and extends upwardly along the interiorsidewall surface of the opening. The resistance variable layer isdisposed over the first electrode. A second electrode is disposed overthe resistance variable layer and contacts at least a part of the seconddielectric layer. An edge region of the RRAM cell does not protrude outof the top surface of the first dielectric layer.

The present disclosure also describes an aspect of a method of forming aresistance variable memory structure. The method includes a firstdielectric layer formed over a conductive structure. The firstdielectric layer has a top surface. An opening is etched in the firstdielectric layer and exposes an area of the conductive structure. Theopening has an interior sidewall surface. A first electrode material isformed over the exposed area of the conductive structure, along theinterior sidewall surface of the opening and over the first top surfaceof the first dielectric layer. A resistance variable layer is formedover the first electrode material. A second electrode material is formedover the resistance variable layer. The second electrode material has aportion in the opening. The portion has a second top surface below thefirst top surface of the first dielectric layer. A second dielectriclayer is formed over the second electrode material. At least onepolishing process is performed to remove the second dielectric layer,the second electrode material, the resistance variable layer and thefirst electrode material above the first top surface of the firstdielectric layer.

Although the embodiments and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. As one ofordinary skill in the art will readily appreciate from the presentdisclosure, processes, machines, manufacture, compositions of matter,means, methods, or steps that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

1. A memory structure comprising: a conductive structure; a firstdielectric layer over the conductive structure, the first dielectriclayer having a first top surface and being substantially oxygen-free; afirst opening in the first dielectric layer extending to an area of theconductive structure, the first opening having an interior sidewallsurface; a first electrode structure having a first portion and anintegrally connected second portion, wherein the first portion is overthe exposed area of the conductive structure, and the second portionextends upwardly along the interior sidewall surface of the firstopening; a resistance variable layer disposed over the first electrodestructure; a second electrode structure over the resistance variablelayer, the second electrode structure having a third portion and anintegrally connected fourth portion, wherein the third portion has asecond top surface below the first top surface of the first dielectriclayer, and the fourth portion extends upwardly along the resistancevariable layer; a second opening defined by the third portion and thefourth portion of the second electrode structure; and at least a part ofa second dielectric layer disposed in the second opening, the seconddielectric layer being substantially oxygen-free.
 2. The memorystructure of claim 1, wherein the first opening has an interior angle ina range of about 92° to about 135°.
 3. The memory structure of claim 1,further comprising a conductive plug penetrating through the seconddielectric layer and contacting the third portion of the secondelectrode structure.
 4. The memory structure of claim 1, wherein an edgeregion of the resistance variable layer protrudes out of an edge regionof the second portion of the first electrode structure and an edgeregion of the fourth portion of the second electrode structure.
 5. Thememory structure of claim 1, wherein the second dielectric layer is overthe first top surface of the first dielectric layer.
 6. The memorystructure of claim 1, further comprising a metal cap layer over theresistance variable layer and under the second electrode structure. 7.The memory structure of claim 1, wherein the resistance variable layercomprises a high-k dielectric material, a binary metal oxide or atransition metal oxide.
 8. The memory structure of claim 1, wherein theresistance variable layer is selectively configurable to form at leastone conductive path between the first portion of the first electrodestructure and the third portion of the second electrode structure. 9-10.(canceled)
 11. A memory structure comprising: a first dielectric layerhaving a top surface and an opening with an interior sidewall surface,the first dielectric layer being substantially oxygen-free; at least apart of a second dielectric layer disposed in a top section of theopening, the second dielectric layer being substantially oxygen-free;and a resistive random access memory (RRAM) cell disposed between theinterior sidewall surface of the opening and the second dielectriclayer, the RRAM cell comprising: a first electrode structure disposed ina bottom section of the opening and extending upwardly along theinterior sidewall surface of the opening; a resistance variable layerdisposed over the first electrode structure; and a second electrodestructure disposed over the resistance variable layer and contacting atleast a part of the second dielectric layer; wherein an edge region ofthe RRAM cell does not protrude out of the top surface of the firstdielectric layer.
 12. The memory structure of claim 11, wherein theresistance variable layer is selectively configurable to form at leastone conductive path between the first electrode structure and the secondelectrode structure.
 13. The memory structure of claim 11, furthercomprising a conductive plug penetrating through the second dielectriclayer and contacting the second electrode structure.
 14. The memorystructure of claim 11, wherein an edge region of resistance variablelayer protrudes out of an edge region of the first electrode structureand an edge region of the second electrode structure.
 15. The memorystructure of claim 14, wherein the resistance variable layer has athickness, and the edge region of resistance variable layer protrudesmore than twice the thickness out of the edge region of the firstelectrode structure and the edge region of the second electrodestructure. 16-17. (canceled)
 18. The memory structure of claim 11,wherein the opening has an aspect ratio in a range from about 0.3 toabout
 1. 19. The memory structure of claim 11, wherein the RRAM cell isdisposed conformally in the bottom section and the interior sidewallsurface of the opening.
 20. A method of forming a resistance variablememory structure, the method comprising: forming a first dielectriclayer over a conductive structure, the first dielectric layer having afirst top surface, the first dielectric layer being substantiallyoxygen-free; etching an opening in the first dielectric layer therebyexposing an area of the conductive structure, the opening having aninterior sidewall surface; forming a first electrode material over theexposed area of the conductive structure, along the interior sidewallsurface of the opening and over the first top surface of the firstdielectric layer; forming a resistance variable layer over the firstelectrode material; forming a second electrode material over theresistance variable layer, the second electrode material having aportion in the opening, wherein the portion has a second top surfacebelow the first top surface of the first dielectric layer; forming asecond dielectric layer over the second electrode material, the seconddielectric layer being substantially oxygen-free; and performing atleast one polishing process to remove the second dielectric layer, thesecond electrode material, the resistance variable layer and the firstelectrode material above the first top surface of the first dielectriclayer.